Applied Physics Letters · 2009 · 78 citations · 20 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsElectronic MaterialsThin FilmsDielectric MaterialsDielectricsFerroelectric MaterialsPiezoelectric MaterialsThin Film Electrical PropertiesThin-film MaterialsCurrent DensityDielectric DispersionFerroelectric PropertiesFerroelectric Thin FilmsLeakage CurrentPiezoelectric PropertiesPiezoelectric Thin FilmsX-ray Diffraction Analysis
Ferroelectric Na0.52K0.48NbO3 (NKN) thin film on Pt/Ti/SiO2/Si substrate was prepared using the radio frequency magnetron sputtering method. The single phase and grain morphologies of NKN were confirmed by x-ray diffraction and atomic force microscopy analysis, respectively. The remnant polarization Pr and coercive electric field Ec of NKN film were 22.5 μC/cm2 and 90 kV/cm, respectively. The NKN film displayed low frequency dielectric dispersion in the temperature range 25–500 °C. The leakage current density of the film was 3.0×10−7 A/cm2 at 100 kV/cm. The piezoelectric constant d33 was estimated to be 45 pm/V using the piezoelectric force microscopy.
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