Applied Physics Letters · 1998 · 24 citations · 17 references
Materials EngineeringMaterials ScienceEpitaxial GrowthMaterial AnalysisEngineeringPhysicsBond-length StrainX-ray DiffractionApplied PhysicsNatural Bond-length DistortionsThin FilmsPseudomorphic GrowthRandom-cluster CalculationMolecular Beam EpitaxyCrystallographyThin Film ProcessingMicrostructure
The bond lengths in a series of strained, buried Ga1−xInxAs thin-alloy films grown coherently on InP(001) have been determined by high-resolution extended x-ray absorption fine-structure measurements. Comparison with a random-cluster calculation demonstrates that the external in-plane epitaxial strain imposed by pseudomorphic growth opposes the natural bond-length distortions due to alloying.
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Quasichemical approximation in binary alloys
A. Sher, Mark van Schilfgaarde, An‐Ban Chen et al. · Physical review. B, Condensed matter · 1987 · 153 citations
Materials Science, Materials Engineering, Cluster Science +14
Bond-length relaxation in pseudobinary alloys
Chih‐Kang Shih, W. E. Spicer, Walter A. Harrison et al. · Physical review. B, Condensed matter · 1985 · 94 citations