Publication | Closed Access
Bond lengths around isovalent impurities and in semiconductor solid solutions
438
Citations
16
References
1984
Year
Materials ScienceSemiconductorsIi-vi SemiconductorEngineeringPhysicsIsovalent ImpuritiesCondensed Matter PhysicsQuantum MaterialsApplied PhysicsX-ray DiffractionIntrinsic ImpuritySemiconductor-impurity SystemsSemiconductor MaterialCrystallographyValence Force FieldCompound Semiconductor
Using a valence force field, we predict the symmetric lattice distortions around isovalent impurities in 64 semiconductor-impurity systems. For the five systems for which extended x-ray absorption fine-structure (EXAFS) data are available, the results are in excellent agreement with experiment. Our theory also explains quantitatively, without adjustable parameters, the observed bond-length variations in solid solutions ${A}_{1\ensuremath{-}x}{B}_{x}C$ of semiconductor alloys, as well as their excess enthalpies of mixing.
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