Journal of Applied Physics · 2008 · 47 citations · 13 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsMaterials CharacterizationThin FilmsDielectric MaterialsDielectricsFerroelectric MaterialsPerovskite MaterialsThin Film AnnealingThin-film MaterialsCapacitance-voltage CharacteristicsCapacitance-voltage CharacterizationCapacitance-voltage MeasurementsDielectric ConstantDielectric HysteresisFerroelectric PropertiesFerroelectric Thin FilmsThin-film Dielectrics
Polycrystalline Bi0.5Na0.5TiO3 (NBT) thin films have been successfully fabricated via a metal organic decomposition process on Pt/Ti/SiO2/Si substrates. The structural evolution of the as-prepared thin films annealed over the moderate temperature range 500–700 °C is studied. NBT thin films annealed at 700 °C are of single phase NBT perovskite type. They exhibit a well-defined P-E hysteresis loop at room temperature. The measured dielectric constant is 465–410 over the frequency range of 1 kHz to 1 MHz. The corresponding dielectric loss is ∼10−2. The measured capacitance-voltage curve shows strong non-linear dielectric behavior leading to a high tunability of the dielectric constant, up to 14% at 1 MHz.
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Ferroelectric and electrical behavior of (Na0.5Bi0.5)TiO3 thin films
Zhaohui Zhou, Junmin Xue, W. Z. Li et al. · Applied Physics Letters · 2004 · 129 citations
Natural Sciences, Materials Engineering, Materials Science +17