SID Symposium Digest of Technical Papers · 2015 · 10 citations · 8 references
Natural SciencesElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesAmorphous Electronic MaterialsAmorphous MaterialsAmorphous SemiconductorsAmorphous SolidsOxide SemiconductorsSemiconductor Device MaterialsAmorphous Indium Gallium Zinc OxideAmorphous Oxide SemiconductorsAmorphous OxidesGallium OxideHigh-electron-mobility TransistorsTerahertz Nanoelectronics
A high‐mobility amorphous Indium‐Gallium‐Zinc‐Tin‐Oxide (a‐IGZTO) TFT was demonstrated. The new TFT achieved a large field effect mobility of ~24.7 cm 2 /Vs, which had a comparable reliability to the a‐IGZO TFT. Furthermore, 4K×2K AMOLED TV addressed by the a‐IGZTO TFT showed a good performance.
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