Electrical Characteristics and Testing Considerations for Gate Oxide Shorts in CMOS ICs.

Abstract

This paper examines the electrical characteristics and testing considerations of gate oxide shorts. Gate oxide shorts will cause increased IDD and in the majority of cases will degrade logic voltage levels and propagation delay times, but may not affect functionality. Stuck-at and functional models are therefore inadequate for testing gate oxide shorts in CMOS ICs unless they are used in conjunction with IDD measurements.