Applied Physics Letters · 2015 · 27 citations · 24 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsDefects In Electronic MaterialsPhotovoltaic MaterialsSemiconductor DefectsSemiconductor PhysicsSolar Cell MaterialsSolar CellsDeep-level DefectsElectronic Structure Of DefectsSemiconductor CharacterizationSolar Cell CharacterizationSolar Cell Device PhysicsSurface Defects CharacterizationThin-film Defect ChemistryThin-film Solar Cells
Deep-level defects were investigated in Cu2ZnSn(S,Se)4 and Cu2ZnSnS4 thin-films using transient photocapacitance (TPC) spectroscopy. A deep-defect, OH1 centered around 1.0 eV above the valance-band (EV) of Cu2ZnSnS4 has been identified at room temperature (RT). However, OH1-defect could be identified in Cu2ZnSn(S,Se)4 at low temperature only. Absence of OH1-defect in Cu2ZnSn(S,Se)4 at RT explains its better performance comparing to Cu2ZnSnS4 solar-cell. A comparative study of the TPC spectra of the Cu(In,Ga)Se2 solar-cells was performed. Low intensity of defect-signal together with lower broadening of exponential band-tail in the TPC spectra were attributed to superior performance of Cu(In,Ga)Se2 solar-cells comparing to Cu2ZnSn(S,Se) counterpart.
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Temperature dependence of the energy gap in semiconductors
Y. P. Varshni · Physica · 1967 · 5.3K citations
Device Characteristics of CZTSSe Thin‐Film Solar Cells with 12.6% Efficiency
Wei Wang, Mark T. Winkler, Oki Gunawan et al. · Advanced Energy Materials · 2013 · 3.2K citations