The effects of radiation damage on the properties of Ni-nGaAs Schottky diodes—I

Isolation of junction devices in GaAs using proton bombardment

A.G. Foyt, W.T. Lindley, C. M. Wolfe et al. · Solid-State Electronics · 1969 · 175 citations

Semiconductors, Electrical Engineering, Engineering +3

Radiation Effects in GaAs

L. W. Aukerman, Philip W. Davis, Ronald D. Graft et al. · Journal of Applied Physics · 1963 · 129 citations

Semiconductors, Electrical Engineering, Engineering +13

Determination of Deep Centers in Conducting Gallium Arsenide

Richard H. Williams · Journal of Applied Physics · 1966 · 116 citations

Electrical Engineering, Engineering, Physics +10

Thermally Stimulated Capacitance (TSCAP) in <i>p-n</i> Junctions

C. T. Sah, Wai-Wing Chan, H.-S. Fu et al. · Applied Physics Letters · 1972 · 104 citations

Engineering, Thermal Conductivity, Semiconductor Device +16

Determination of deep centers in silicon by thermally stimulated conductivity measurements

H. Schade, D.C. Herrick · Solid-State Electronics · 1969 · 42 citations

Electrical Engineering, Engineering, Physics +8