Diamond, silicon carbide and related wide bandgap semiconductors

Jeffrey T. Glass, R. Messier, Naoji Fujimori

1990 · 101 citations · 0 references

Concepts

Abstract

The exact definition of wide bandgap semiconductors versus conventional semiconductors is rather ambiguous. A variety of different semiconductors have been discussed in the present symposium, but the major emphasis, of course dictated by the participant response, has been placed on diamond and silicon carbide. Simply stated, diamond as an emerging material has the greater potential for many of these applications; however, silicon carbide is in a much more advanced stage of development. With the high level of activity in diamond research and development, it may be expected that many of the technological hurdles facing this material will be overcome in the years ahead. On the other hand, if certain key problems cannot be resolved (i.e., a shallow n-type dopant and a heteroepitaxial substrate), or if economic considerations are not favorable, then silicon carbide may be the wide bandgap semiconductor of choice for many of the aforementioned applications. Furthermore, other materials (some discussed in this symposium) will continue to be developed and compete for niches in this fast paced, rapidly growing market.