A New Oxide Damage Characterization Technique For Evaluating Hot Carrier Reliability Of Flash Memory Cell After P/E Cycles - Concepedia

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A New Oxide Damage Characterization Technique For Evaluating Hot Carrier Reliability Of Flash Memory Cell After P/E Cycles

13

Citations

1

References

1997

Year

Chung, Yih, Cheng Cheng, Liang Liang

Symposium on VLSI Technology

Flash Memory CellElectrical EngineeringP/e CyclesEngineeringHardware ReliabilityFlash MemoryApplied PhysicsCircuit ReliabilitySemiconductor MemoryElectronic PackagingDevice ReliabilityMicroelectronicsElectrical Insulation

References

	Year	Citations

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