Publication | Closed Access
Wirebond reliability in IGBT-power modules: application of high resolution strain and temperature mapping
21
Citations
2
References
2003
Year
Unknown Venue
EngineeringTemperature MappingWirebond GeometryPower ElectronicsLocalized DisplacementsReliability EngineeringHigh Resolution StrainElectronic PackagingWirebond ReliabilityReliabilityElectrical EngineeringHardware ReliabilityFracture Mechanics-based ModelBias Temperature InstabilitySolid MechanicsDevice ReliabilityMicroelectronicsPhysic Of FailurePower DeviceApplied PhysicsCircuit ReliabilityMechanics Of MaterialsElectrical Insulation
A fracture mechanics-based model has been developed for the reliability of wirebonds in IGBT-based power modules. Initial correlation of the model has been achieved based upon measurements of extremely localized displacements and temperature distributions of wirebonds and devices during both transient and steady states. The measurements have been performed by high-resolution holographic interferometry and high-speed infrared microscopy. The wirebond geometry has been found to have a profound effect on the localized temperature distribution and hence reliability.
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