Japanese Journal of Applied Physics · 1996 · 23 citations · 2 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsPhotovoltaic DevicesSemiconductor InterfacesSemiconductor SurfacesSilicon MaterialsSolar CellsSurface PassivationAnnealing EffectsPassivation LayersPassivation Of SemiconductorsPassivation TechniquesSilicon WafersSurface AnnealingSurface Passivation LayersSurface Recombination
It is shown that hydrogen-radical postannealing of SiO 2 on Si wafers can result in high effective lifetime (τ eff ), low surface recombination velocity ( S eff ) and low midgap interface state density at the SiO 2 /Si interface ( D ito ). The annealing effect appeared above 200° C within a very short annealing time to a greater degree than in 3% H 2 forming gas annealing at 400° C. This annealing method is suitable for the surface passivation process of solar cell devices.
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