Interfacial Cleaning Effects in Passivating InSb with Al[sub 2]O[sub 3] by Atomic Layer Deposition

Abstract

was deposited on by atomic layer deposition using trimethyl-aluminum as the metal precursor. Most of the native oxides on substrate were in situ cleaned away from the interface of , except for a small amount of residual, after the deposition of . Moreover, a slight contamination of , , and nearly negligible was observed on the surface of . The films show a good insulating property ( to within ), and a transition from accumulation to depletion was displayed from the capacitance-voltage relation measured at .