A 2/3-inch 2 M-pixel IT-CCD image sensor with individual p-wells for separate V-CCD and H-CCD formation

Abstract

This 2/3-inch optical-lens-format, 2 M-pixel interline-transfer (IT) CCD image sensor achieves large charge handling capability in the vertical CCD (V-CCD), and at the same time ensures sufficient transfer efficiency in the horizontal CCD (H-CCD). A V-CCD/H-CCD connection eliminates the potential barrier caused by separate V-CCD/H-CCD formation. Image sensor performance includes a 40 k-electron charge-handling capability in the V-CCD, leading to a 71 dB dynamic range, and sufficient transfer efficiency in the H-CCD, with no deterioration in V-CCD to H-CCD transfer efficiency. The power consumption is 0.49 W, just 22% of that previously achieved in a 1-inch 2 M pixel frame interline transfer (FIT) CCD. This is possible because the p-well reduces the driving pulse amplitude in the V-CCD and the IT scheme decreases electrode capacitance and driving frequency.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>