IEEE Journal of Solid-State Circuits · 1997 · 16 citations · 2 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsCmos Circuit DesignHigh-frequency Semiconductor DevicesIntegrated Circuit DesignSwitching TechniquesWide-bandgap Semiconductor DevicesBroadcastHeterojunction Bipolar Transistors
A 16/spl times/16 crosspoint switch IC has been designed and implemented in a 2-/spl mu/m GaAs heterojunction bipolar transistor (HBT) technology. The IC is a strictly nonblocking switch with broadcast capability and asynchronous data paths. The IC has fully differential internal circuitry and is packaged in a custom high-speed assembly. Test results confirmed that the IC achieves a 10-Gb/s/channel (or 160-Gb/s aggregate) capacity, the highest reported to date for a 16/spl times/16 crosspoint switch IC.
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Ender Ayanoğlu, Richard D. Gitlin · IEEE Communications Magazine · 1996 · 14 citations