All‐electrical detection of spin Hall effect in semiconductors

Abstract

Since the prediction of the spin Hall effect more than 40 years ago, significant progress was made in theoretical description as well as in experimental observation, especially in the last decade. In this article, we present three different concepts and measurement geometries for all‐electrical detection of the direct and the inverse spin Hall effect in semiconductors. Based on experiments with n‐ and p‐doped GaAs microstructures, we describe our experimental approaches and methods to experimentally identify the spin Hall effect and compare our results to previous experiments and theoretical considerations. Device geometry for the detection of the direct spin Hall effect.