Applied Physics Letters · 2009 · 236 citations · 17 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsMagnetic MaterialsMaterials PhysicsFerromagnetic MaterialsFerromagnetismMagnetic Properties Of SolidsMagnetic Thin FilmsSpintronicsThin Film Magnetic PropertiesEpitaxial Thin FilmsMagnetic DampingMagnetic Tunnel JunctionsMagnetization In Thin FilmsMagnetoresistanceThin Film MagnetismTunnel JunctionsTunnel Magnetoresistance
Transport properties in magnetic tunnel junctions (MTJs) with Co2FexMn1−xSi (CFMS, x=0–1.0)/Al–O/Co75Fe25 structure and Gilbert damping constant in the epitaxial CFMS films were investigated. The tunnel magnetoresistance ratio is as high as 75% in MTJs with x=0.6 at room temperature. The Gilbert damping constant is minimal at x=0.4. Relations between half-metallicity and the Gilbert damping constant in CFMS films were examined, revealing that the damping constant is small in half-metallic CFMS films.
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