Improved resistive switching phenomena observed in SiN_<i>x</i>‐based resistive switching memory through oxygen doping process

Abstract

Abstract The improvement of resistive switching (RS) phenomena of silicon‐nitride (SiN x )‐based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un‐doped SiN x films, the oxygen doped SiN x (SiN x :O 2 )‐based ReRAM cells show a lower current (∼0.3 μA) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiN x :O 2 film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiN x films can effectively improve the RS characteristics of SiN x ‐based ReRAM cells. (© 2014 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)