Preservation of Indium Phosphide Substrates: The In‐Sn‐P Melt Revisited

Abstract

Using Auger electron spectroscopy and secondary ion mass spectrometry, we have detected very high levels of tin (∼ 1021/cm3) on (100) substrates preserved at high temperatures (650°–700°C) with phosphorus vapor supplied by an In‐Sn‐P solution. Depth profiling through epilayers grown on preserved substrates, however, indicates no tin buildup at the epilayer/substrate interface. Surface studies and depth profiling of control samples reveal that the tin accumulated during preservation is restricted to the near‐surface region (≲ 10Å) and readily dissolves into an In‐P melt.