MOVPE Growth of Ga_1-xAl_xAs–GaAs Quantum Well Heterostructures

Abstract

Ga 1- x Al x As–GaAs quantum wells are grown by MOVPE. Wells as narrow as 25 Å are made. Interface quality in relation to alloy clustering and abruptness in change of Al-content are characterized with the aid of luminescence spectrum measurements. A remarkable agreement is found between the experimental n =1 electron to heavy hole transition energies and those which are calculated with the simple rectangular well model. The results indicate that the Al-content changes at the interfaces over less than one unit cell.