Low voltage high isolation MEMS switches

Abstract

This paper describes MEMS thermally actuated RF switches. The switches are constructed using a stress controlled dielectric membrane, with patterned metallic contacts. The structure allows one to build resistive switches at RF frequencies. The process is CMOS compatible and the resulting switches can be easily operated below 5 V. A wafer scale packaging technique has been developed to protect the components during the dicing stage, and for long term durability. Measured performances show 0.25 dB loss for a double series switch and isolation better than 55 dB at 2 GHz.