Total dose and single event effects testing of UTMC commercial RadHard/sup TM/ gate arrays

Abstract

Results from total dose and single event effects testing of a UTMC Microelectronic Systems Commercial RadHard/sup TM/ gate array standard evaluation circuit (SEC) are reported. Total dose levels up to 300 krad(Si) and error rates of less than 1/spl times/10/sup -10/ errors/bit-day, with no single event latch-up (SEL), were demonstrated. Results from total dose testing of capacitor test structures from AMI's 0.6 /spl mu/m mixed signal process are also reported, indicating the possibility of greater than 200 krad(Si) total dose hardness for 0.6 /spl mu/m CMOS when processed with the UTMC Commercial RadHard/sup TM/ process module.