Use of<tex>$rm SrTiO_3$</tex>as a Single Buffer Layer for RABiTS YBCO Coated Conductor

Abstract

SrTiO/sub 3/ (STO) films were epitaxially deposited by PLD on textured Ni-3wt%W (Ni-3W) substrates. The STO film was deposited in two steps-reducing atmosphere first, and then oxidizing atmosphere-to prevent the oxidation of the metal surface from hindering the epitaxial relationship between the film and the substrate. The deposited STO films exhibited sharp biaxial texture and dense surface. YBCO films were epitaxially deposited on STO/Ni-3W and showed J/sub c/(77K, self field)=1.2MA/cm/sup 2/ and T/sub c/(onset)=88 K. Auger electron spectrometry depth profile analyses show that the STO film can block the diffusion of the metal from the substrate. This work has shown that STO films epitaxially deposited on textured Ni-3W substrate can be used as a single buffer layer of the high current carrying YBCO coated conductor.