BC35: a 0.35 μm, 30 GHz production RF BiCMOS technology

Abstract

BC35, a 0.35 /spl mu/m RF BiCMOS production process on 200 mm wafers is described. BC35 includes 0.35 /spl mu/m CMOS, RF passive elements and two NPNs with peak Ft of 32 and 23 GHz, peak Fmax of 74 and 50 GHz and BVceo of 3.8 and 6.2 V respectively. Enhancements to this production process are also described including the addition of a SiGe epi base to increase peak Ft to 53 GHz and the reduction of emitter width to achieve a 2 GHz NFmin of 0.69 dB.