2003 · 17 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsBicmos TechnologyMicrowave DevicesMicrowave Integrated Circuit DesignMillimeter-wave Integrated CircuitsMillimeter-wave TransistorsMonolithic Microwave Integrated CircuitsRf Cmos DesignSige Bicmos Design
BC35, a 0.35 /spl mu/m RF BiCMOS production process on 200 mm wafers is described. BC35 includes 0.35 /spl mu/m CMOS, RF passive elements and two NPNs with peak Ft of 32 and 23 GHz, peak Fmax of 74 and 50 GHz and BVceo of 3.8 and 6.2 V respectively. Enhancements to this production process are also described including the addition of a SiGe epi base to increase peak Ft to 53 GHz and the reduction of emitter width to achieve a 2 GHz NFmin of 0.69 dB.