2005 · 32 citations · 6 references
EngineeringComputer EngineeringElectrical EngineeringLow-power DesignMemoryMicroelectronicsCmos Circuit DesignLow-power Digital Circuit DesignMemory DevicesMemory Hierarchy DesignMemory Subsystem DesignPhysical DesignCmos ScalingContent-addressable Memory (Cam)Energy-efficient Memory DesignEnergy-efficient Memory SystemsLow-power Memory CircuitsMemory Circuit DesignMemory CircuitsPower-efficient Memory Design
An AND-type match-line scheme is fabricated in a 0.18 /spl mu/m 1.8V CMOS process. The 256/spl times/128b CAM achieves a faster search time and a 20% energy reduction compared with NOR designs. This AND-type circuit has a search time of 1.75ns with an energy of 0.57fJ/bit/search.
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Fully parallel 30-MHz, 2.5-Mb CAM
F. Shafai, K.J. Schultz, G.F.R. Gibson et al. · IEEE Journal of Solid-State Circuits · 1998 · 93 citations