Applied Physics Letters · 2010 · 320 citations · 14 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsThin FilmsDefects In Electronic MaterialsElectronic Band StructureElectronic Material CharacterizationSemiconductor Thin FilmsThin-film MaterialsWide-bandgap SemiconductorsBand GapBand Gap DeterminationBand Gap EnergyChalcogenide Thin FilmsElectronic Band GapMeasurement TechniquesSemiconductor Band Gap DeterminationSubstrate Temperature Effects
We demonstrate experimental data to elucidate the reason for the discrepancies of reported band gap energy (Eg) of Cu2ZnSnSe4 (CZTSe) thin films, i.e., 1.0 or 1.5 eV. Eg of the coevaporated CZTSe film synthesized at substrate temperature (Tsub) of 370 °C, which was apparently phase pure CZTSe confirmed by x-ray diffraction (XRD) and Raman spectroscopy, is found to be around 1 eV regardless of the measurement techniques. However, depth profile of the same sample reveals the formation of ZnSe at CZTSe/Mo interface. On the other hand, Eg of the coevaporated films increases with Tsub due to the ZnSe formation, from which we suggest that the existence of ZnSe, which is hardly distinguishable from CZTSe by XRD, is the possible reason for the overestimation of overall Eg.
14
Defect physics of the kesterite thin-film solar cell absorber Cu2ZnSnS4
Shiyou Chen, Xin Gong, Aron Walsh et al. · Applied Physics Letters · 2010 · 552 citations
Natural Sciences, Materials Engineering, Materials Science +17
M. Altosaar, J. Raudoja, Kristi Timmo et al. · physica status solidi (a) · 2008 · 357 citations
Natural Sciences, Materials Engineering, Materials Science +17