Few graphene layers/carbon nanotube composites grown at complementary-metal-oxide-semiconductor compatible temperature

Abstract

We investigate the growth of the recently demonstrated composite material composed of vertically aligned carbon nanotubes capped by few graphene layers. We show that the carbon nanotubes grow epitaxially under the few graphene layers. By using a catalyst and gaseous carbon precursor different from those used originally we establish that such unconventional growth mode is not specific to a precise choice of catalyst–precursor couple. Furthermore, the composite can be grown using catalyst and temperatures compatible with complementary-metal-oxide-semiconductor processing (T<450 °C).