2002 · 81 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsPower AmplifiersRadio-frequency Integrated CircuitsGain CompressionIntermodulation DistortionLinearityLinearity EnhancementPower Amplifier DesignRadio Frequency Power AmplifiersRadio-frequency Power DevicesRf Cmos Design
The structure, device processing and performance of a 2 GHz, 60 Watt silicon LDMOS RF power transistor are described. At 2 GHz with a 26 Vdc drain operating voltage this device has 1 dB power gain compression at 63 Watts CW and 44% drain efficiency. Under two-tone test conditions, at 60 Watts peak output, 11.2 dB power gain is realized with less than -30 dBc intermodulation distortion and greater than 30% drain efficiency. Excellent linearity is maintained over a wide dynamic range.