High frequency low noise potentialities of down to 65nm technology nodes MOSFETs

Abstract

65 nm n-MOSFETs show state-of-the-art cut-off frequency with ft = 210 GHz and microwave low noise and high gain properties (NFmin = 0.8 dB and Gass = 17.3 dB at 12 GHz). As compared with the previous nodes, the high frequency properties of these MOSFETs continue to be in agreement with the downscaling trends.