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Effect of oxygen stoichiometry on the electrical properties of La0.5Sr0.5CoO3 electrodes
110
Citations
15
References
1997
Year
EngineeringElectrode-electrolyte InterfaceOxidation ResistanceLaser AblationChemistryElectrical PropertiesMetal-insulator TransitionCorrosionSuperconductivityLa0.5sr0.5coo3 Thin FilmsPulsed Laser DepositionOxygen StoichiometryElectrode Reaction MechanismThin Film ProcessingMaterials ScienceElectrical EngineeringPhysicsOxide ElectronicsElectrochemical ProcessElectrochemistryMaterial AnalysisNatural SciencesSurface ScienceApplied PhysicsCondensed Matter PhysicsThin FilmsLa0.5sr0.5coo3 ElectrodesElectrical Insulation
We report on the metal-insulator transition of La0.5Sr0.5CoO3 thin films deposited by pulsed laser ablation on LaAlO3 substrates. The films were cooled in oxygen partial pressures between 760 and 10−5 Torr and electrical resistivity of the films was measured as a function of cooling oxygen pressure. La0.5Sr0.5CoO3 films changed from metallic to insulating behavior depending on their oxygen content. A defect model has been proposed to explain this transition and the change in conductivity is related to the change in the oxidation state of the cobalt ions. The model explains the relationship between oxygen partial pressure and electrical conductivity in La0.5Sr0.5CoO3, which describes the experimental dependence reasonably well. Positron annihilation studies were also done on the same set of samples and the S parameter was seen to increase by 8% from a fully oxygenated sample to a sample cooled in 10−5 Torr.
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