Time-resolved spectroscopy of InxGa1−xN/GaN multiple quantum wells at room temperature

Abstract

We have measured the time-resolved photoluminescence (PL) from a series of InxGa1−xN/GaN (x=0.22) multiple quantum well structures at room temperature. Lifetimes longer than 1 ns (1.87±0.02 ns) were measured at room temperature. The emission lifetime was found to lengthen with increasing excitation power, this is attributed to the saturation of recombination centers. The PL decay kinetics were found to be quite sensitive to the emission wavelength. The energy dependence of the emission lifetime is attributed to nanoscale fluctuations in the indium concentration.