The effect of diluent gases on the growth behavior of CVD SiC films with temperature

<i>The Properties of Gases and Liquids</i>

Robert C. Reid, T. K. Sherwood, Robert E. Street · Physics Today · 1959 · 14.2K citations

Natural Sciences, Chemistry, Physics +16

A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor

F. C. Eversteyn, P. J. Severin, C. H. J. v. d. Brekel et al. · Journal of The Electrochemical Society · 1970 · 273 citations

Engineering, Materials Engineering, Materials Science +10

Advanced ceramics by chemical vapor deposition techniques

D.P. Stinton, Theodore M. Besmann, R.A. Lowden · American Ceramic Society bulletin · 1988 · 134 citations

Natural Sciences, Materials Engineering, Materials Science +12

A model for development of orientation of vapour deposits

Dong Nyung Lee · Journal of Materials Science · 1989 · 117 citations

Natural Sciences, Earth Sciences, Petroleum Engineering +9

Thermodynamic Analysis and Kinetic Implications of Chemical Vapor Deposition of Sic from Si‐C‐C1‐H Gas Systems

Gary Fischman, William T. Petuskey · Journal of the American Ceramic Society · 1985 · 103 citations

Natural Sciences, Materials Engineering, Materials Science +16