Crystal Consulting (Germany)

Modeling of incorporation of O, N, C and formation of related precipitates during directional solidification of silicon under consideration of variable processing parameters

C. Reimann, M. Trempa, Thomas Jung et al. · Journal of Crystal Growth · 2010 · 73 citations

Materials Engineering, Materials Science, Process Intensification +11

The influence of growth rate on the formation and avoidance of C and N related precipitates during directional solidification of multi crystalline silicon

M. Trempa, C. Reimann, Jochen Friedrich et al. · Journal of Crystal Growth · 2010 · 70 citations

Materials Science, Engineering, Growth Rate +11

About the formation and avoidance of C and N related precipitates during directional solidification of multi-crystalline silicon from contaminated feedstock

C. Reimann, M. Trempa, Jochen Friedrich et al. · Journal of Crystal Growth · 2010 · 54 citations

Materials Science, Chemical Engineering, Engineering +6

Threading dislocations in n- and p-type 4H–SiC material analyzed by etching and synchrotron X-ray topography

Birgit Kallinger, Sebastian Polster, Patrick Berwian et al. · Journal of Crystal Growth · 2010 · 53 citations

Materials Engineering, Materials Science, Engineering +9

Fundamentals and engineering of defects

P. Rudolph · Progress in Crystal Growth and Characterization of Materials · 2016 · 45 citations

Materials Engineering, Reliability Engineering, Engineering +6