Subthreshold Current Mirrors

Subthreshold Current Mirrors is a current mirror circuit configuration in which the constituent transistors operate in the subthreshold (weak inversion) region of operation, enabling ultra-low power analog signal processing by exploiting the exponential relationship between gate-source voltage and drain current at very low current levels.

10

Publications

489

Citations

31

Authors

16

Institutions

Publications per year

2017–2026

3

Authors

31

  1. YA
    Yujie Ai

    Institute of Semiconductors, China

    1 publications · 13 citations

    1

    h-index

  2. CP
    Costas Psychalinos

    University of Patras, Greece

    1 publications · 55 citations

    1

    h-index

  3. QZ
    Qiang Zhao

    Shenzhen University, China

    1 publications · 32 citations

    1

    h-index

  4. PG
    Peizhou Gan

    Hohai University, China

    1 publications · 32 citations

    1

    h-index

  5. RH
    Ru Huang

    Peking University, China

    1 publications · 13 citations

    1

    h-index

1–5 of 31

Venues

  1. 2

    h-index

  2. 1

    h-index

  3. Electronics Letters

    1 publications · 18 citations

    1

    h-index

  4. IEEE Journal of Solid-State Circuits

    1 publications · 20 citations

    1

    h-index

  5. IEEE Transactions on Electron Devices

    1 publications · 13 citations

    1

    h-index

1–5