Parasitic Coupling
Parasitic Coupling is an undesired form of electromagnetic interaction between adjacent circuits or conductive elements, arising from inherent physical proximity and manifested through stray capacitance or inductance, which distorts signal integrity and circuit performance.
272
Publications
11.9K
Citations
908
Authors
286
Institutions
Publications per year
2017–2026
53
Variants
Stray Coupling
Parents
272
Effects of Parasitic Parameters on EMI Filter Performance
S. Wang, F.C. Lee, D.Y. Chen et al. · IEEE Transactions on Power Electronics · 2004 · 302 citations
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286

Delft University of Technology
Delft, The Netherlands
9 h-index
22 publications
800 citations
Universitat Politècnica de Catalunya
Barcelona, Spain
6 h-index
11 publications
375 citations
École Polytechnique Fédérale de Lausanne
Lausanne, Switzerland
6 h-index
20 publications
633 citations
Virginia Tech
Blacksburg, United States
6 h-index
20 publications
2K citations
Purdue University West Lafayette
West Lafayette, United States
5 h-index
9 publications
260 citations

Wrocław University of Science and Technology
Wroclaw, Poland
5 h-index
13 publications
539 citations
University of Colorado Boulder
Boulder, United States
5 h-index
20 publications
1.3K citations

Ferdinand-Braun-Institut
Berlin, Germany
5 h-index
10 publications
454 citations
1–8 of 286
21 publications · 1.3K citations
18
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10 publications · 342 citations
10
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9 publications · 858 citations
8
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6 publications · 109 citations
6
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6 publications · 499 citations
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