Low-side Gate Drive Circuits
Low-Side Gate Drive Circuits is a gate drive circuit configuration in which the semiconductor switch is connected between the load and ground, enabling control of the switching device by referencing the gate drive signal to a fixed ground potential, thereby simplifying biasing and signal integrity compared to high-side configurations.
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Publications
269
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27
Authors
10
Institutions
Publications per year
2017–2026
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Queen's University
Kingston, Canada
2 h-index
6 publications
279 citations
Kyungpook National University
Daegu, South Korea
1 h-index
4 publications
100 citations
Ben-Gurion University of the Negev
Beersheba, Israel
1 h-index
3 publications
30 citations
Fuji Electric (Japan)
Tokyo, Japan
1 h-index
1 publications
16 citations

National Taipei University of Technology
Taipei, Taiwan
1 h-index
3 publications
159 citations

Ghent University
Ghent, Belgium
1 h-index
4 publications
144 citations
Picanol (Belgium)
Ypres, Belgium
1 h-index
1 publications
36 citations
Hitachi (Japan)
Tokyo, Japan
1 h-index
1 publications
16 citations
1–8 of 10
3 publications · 110 citations
3
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1 publications · 53 citations
1
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1 publications · 36 citations
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1 publications · 12 citations
1 publications · 12 citations
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