Low-side Gate Drive Circuits

Low-Side Gate Drive Circuits is a gate drive circuit configuration in which the semiconductor switch is connected between the load and ground, enabling control of the switching device by referencing the gate drive signal to a fixed ground potential, thereby simplifying biasing and signal integrity compared to high-side configurations.

9

Publications

269

Citations

27

Authors

10

Institutions

Publications per year

2017–2026

2

Authors

27

  1. RL
    Ray‐Lee Lin

    National Cheng Kung University, Taiwan

    1 publications · 22 citations

    1

    h-index

  2. SY
    S. Ye

    University of Oklahoma, United States

    1 publications · 71 citations

    1

    h-index

  3. CQ
    Cheng Qian

    Huazhong University of Science and Technology, China

    1 publications · 14 citations

    1

    h-index

  4. YL
    Yan‐Fei Liu

    Queen's University, Canada

    1 publications · 71 citations

    1

    h-index

  5. FL
    F.C. Lee

    Virginia Tech, United States

    1 publications · 22 citations

    1

    h-index

1–5 of 27

Venues

  1. IEEE Transactions on Power Electronics

    3 publications · 110 citations

    3

    h-index

  2. IEEE Transactions on Industrial Electronics

    1 publications · 53 citations

    1

    h-index

  3. IEEE Transactions on Industry Applications

    1 publications · 36 citations

    1

    h-index

  4. IEEE Journal of Solid-State Circuits

    1 publications · 12 citations

  5. IEEE Transactions on Electron Devices

    1 publications · 12 citations

1–5