Interdiffusion At Interfaces

Interdiffusion At Interfaces is a physical phenomenon in semiconductor materials science wherein atoms from adjacent layers mutually diffuse across the interface, leading to a compositional grading that alters the electronic and structural properties of the junction.

516

Publications

20.1K

Citations

2.1K

Authors

599

Institutions

Publications per year

2017–2026

88

Authors

2.1K

  1. RS
    R. S. Bauer

    Palo Alto Research Center, United States

    6 publications · 263 citations

    6

    h-index

  2. AF
    A. Franciosi

    University of Minnesota, United States

    5 publications · 138 citations

    5

    h-index

  3. AP
    Aloke Paul

    Indian Institute of Science Bangalore, India

    5 publications · 210 citations

    5

    h-index

  4. JH
    J. H. Weaver

    University of Minnesota, United States

    5 publications · 140 citations

    5

    h-index

  5. GM
    G. Margaritondo

    École Polytechnique Fédérale de Lausanne, Switzerland

    5 publications · 276 citations

    5

    h-index

1–5 of 2.1K

Venues

  1. Journal of Applied Physics

    73 publications · 2.3K citations

    29

    h-index

  2. Applied Physics Letters

    55 publications · 3.1K citations

    28

    h-index

  3. Physical review. B, Condensed matter

    PRB · 26 publications · 1.3K citations

    20

    h-index

  4. Thin Solid Films

    18 publications · 447 citations

    13

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 13 publications · 404 citations

    11

    h-index

1–5