Interdiffusion At Interfaces
Interdiffusion At Interfaces is a physical phenomenon in semiconductor materials science wherein atoms from adjacent layers mutually diffuse across the interface, leading to a compositional grading that alters the electronic and structural properties of the junction.
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2017–2026
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Interfacial phenomena in metals and alloys
Materials Chemistry · 1978 · 1.6K citations
Natural Sciences, Materials Engineering, Materials Science +12
Disorder of an AlAs-GaAs superlattice by impurity diffusion
W. D. Laidig, N. Holonyak, M. D. Camras et al. · Applied Physics Letters · 1981 · 599 citations
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Centre National de la Recherche Scientifique
Paris, France
13 h-index
58 publications
2.3K citations

Chinese Academy of Sciences
Beijing, China
12 h-index
39 publications
2.4K citations
University of Wisconsin–Madison
Madison, United States
12 h-index
45 publications
1.8K citations
Forschungszentrum Jülich
Jülich, Germany
11 h-index
20 publications
1.1K citations

Beihang University
Beijing, China
10 h-index
59 publications
2.1K citations

Northeastern University
Shenyang, China
8 h-index
29 publications
1.1K citations
Xerox (United States)
Norwalk, United States
8 h-index
20 publications
1.1K citations
University of Illinois Urbana-Champaign
Urbana, United States
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28 publications
5K citations
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55 publications · 3.1K citations
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PRB · 26 publications · 1.3K citations
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JJAP · 13 publications · 404 citations
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