Concepedia

Equivalent Input Noise Current

Equivalent Input Noise Current is a noise modeling metric in low-noise circuit design that quantifies the noise current at the input of a device or network which produces the same output noise as the actual internal and external noise sources when referred to the input, distinguishing it from voltage-based noise representations by characterizing current-contributed noise performance.

14

Publications

355

Citations

46

Authors

21

Institutions

Publications per year

2017–2026

0

Parents

Publications

14

A multifrequency magnetic induction tomography system using planar gradiometers: data collection and calibration

J. Rosell, Robert Merwa, Patricia Brunner et al. · Physiological Measurement · 2006 · 53 citations

, , +17

Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics

Q. Dong, Y. X. Liang, D. K. Ferry et al. · Applied Physics Letters · 2014 · 49 citations

, , +16

Low-noise 8 GHz PIN/FET optical receiver

J.L. Gimlett · Electronics Letters · 1987 · 43 citations

, , +16

Fiber-optic multigigabit GaAs MIC front-end circuit with inductor peaking

N. Ohkawa · Journal of Lightwave Technology · 1988 · 34 citations

, , +14

20 GHz bandwidth low-noise HEMT preamplifier for optical receivers

N. Ohkawa · Electronics Letters · 1988 · 25 citations

, , +16

1–5 of 14

Authors

46

  1. SB
    Stewart Bland

    IQE (United Kingdom), United Kingdom

    2 publications · 40 citations

    2

    h-index

  2. NO
    N. Ohkawa

    NTT (Japan), Japan

    2 publications · 59 citations

    2

    h-index

  3. DS
    D.A.H. Spear

    Hartford Financial Services (United States)

    2 publications · 40 citations

    2

    h-index

  4. AB
    Alexios Birbas

    University of Patras, Greece

    1 publications · 11 citations

    1

    h-index

  5. DT
    D.P. Triantis

    University of Patras, Greece

    1 publications · 11 citations

    1

    h-index

1–5 of 46

Institutions

21

  1. Fraunhofer Institute for Applied Solid State Physics

    Freiburg im Breisgau, Germany

    2 h-index

    6 publications

    116 citations

  2. NTT (Japan)

    Tokyo, Japan

    2 h-index

    2 publications

    59 citations

  3. Harbin Institute of Technology

    Harbin, China

    1 h-index

    1 publications

    10 citations

  4. Leiden University

    Leiden, The Netherlands

    1 h-index

    3 publications

    45 citations

  5. University of Turin

    Turin, Italy

    1 h-index

    1 publications

    23 citations

  6. Motorola (Germany)

    Berlin, Germany

    1 h-index

    1 publications

    14 citations

  7. Centre National de la Recherche Scientifique

    Paris, France

    1 h-index

    7 publications

    343 citations

  8. LifeArc

    London, United Kingdom

    1 h-index

    4 publications

    68 citations

1–8 of 21

Venues

  1. Electronics Letters

    4 publications · 108 citations

    4

    h-index

  2. 1

    h-index

  3. IEEE Transactions on Electron Devices

    1 publications · 11 citations

    1

    h-index

  4. 1

    h-index

  5. Applied Physics Letters

    1 publications · 49 citations

    1

    h-index

1–5