H. F. Chung

Room-temperature continuous operation of <i>p</i>-<i>n</i> Al<i>x</i>Ga1−<i>x</i>As-GaAs quantum well heterostructure lasers grown on Si

D.G. Deppe, N. Holonyak, D. W. Nam et al. · Applied Physics Letters · 1987 · 85 citations

Semiconductors, Photonics, Semiconductor Technology +15

Stability of 300 K continuous operation of <i>p</i>-<i>n</i> Al<i>x</i>Ga1−<i>x</i>As-GaAs quantum well lasers grown on Si

D.G. Deppe, D. W. Nam, N. Holonyak et al. · Applied Physics Letters · 1987 · 56 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Integration of a resonant-tunneling structure with a metal-semiconductor field-effect transistor

T. K. Woodward, T. C. McGill, H. F. Chung et al. · Applied Physics Letters · 1987 · 43 citations

Electrical Engineering, Engineering, Tunneling Microscopy +8

Characterization of OMVPE-Grown AlGaInN Heterostructures

D. P. Bour, H. F. Chung, Werner Götz et al. · MRS Proceedings · 1996 · 30 citations

Materials Science, Engineering, Applied Physics +2

Continuous (300 K) photopumped laser operation of Al<i>x</i>Ga1−<i>x</i>As-GaAs quantum well heterostructures grown on strained-layer GaAs on Si

R. W. Kaliski, N. Holonyak, K. C. Hsieh et al. · Applied Physics Letters · 1987 · 24 citations

Engineering, Laser Applications, Laser Material +18