Concepedia

Nobuyoshi Awaya

NA

Statistics

Publications

15

Citations

780

H-Index

12

Active since

1988

Affiliations

NTT Basic Research Laboratories(Current)

Shizuoka University

Taiyo Yuden (Japan)

Nobuyoshi Awaya is an author at NTT Basic Research Laboratories specializing in materials science, materials engineering, and natural sciences.

Publications per year

1988–2012

15

Publications

15

Ti O 2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching

Masayuki Fujimoto, Hiroshi Koyama, Masashi Konagai et al. · Applied Physics Letters · 2006 · 220 citations

Natural Sciences, Materials Engineering, Materials Science +17

Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)

W.W. Zhuang, Wei Pan, Bruce Ulrich et al. · 2003 · 155 citations

Engineering, Computer Engineering, Electrical Engineering +15

High Speed Unipolar Switching Resistance RAM (RRAM) Technology

Yasunari Hosoi, Yasunari Tamai, Tsuyoshi Ohnishi et al. · 2006 · 66 citations

Engineering, Electrical Engineering, Materials Science +14

Evaluation of a copper metallization process and the electrical characteristics of copper-interconnected quarter-micron CMOS

Nobuyoshi Awaya, Hiroshi Inokawa, Ei YAMAMOTO et al. · IEEE Transactions on Electron Devices · 1996 · 52 citations

Engineering, Electrical Engineering, Materials Science +17

Resistance random access memory switching mechanism

Sheng Teng Hsu, Tingkai Li, Nobuyoshi Awaya · Journal of Applied Physics · 2007 · 43 citations

Engineering, Electrical Engineering, Materials Science +17

1–5 of 15