Y.–H. Zhang

Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications

P. Dowd, S. R. Johnson, S.A. Feld et al. · Electronics Letters · 2003 · 48 citations

Engineering, Communication, Electrical Engineering +13

Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1−Sb type-II superlattices

Elizabeth H. Steenbergen, Jeremy A. Massengale, Gamini Ariyawansa et al. · Journal of Luminescence · 2016 · 46 citations

Natural Sciences, Materials Engineering, Materials Science +16

Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (001) substrates for electronic and optoelectronic device applications

Jinchen Fan, Lin Ouyang, X. Liu et al. · Journal of Crystal Growth · 2010 · 42 citations

Engineering, Materials Engineering, Materials Science +14

Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors

Yong Huang, Jae‐Hyun Ryou, Russell D. Dupuis et al. · Journal of Crystal Growth · 2010 · 39 citations

Engineering, Materials Engineering, Materials Science +17

Reflection high-energy electron diffraction during substrate rotation: A new dimension for<i>in situ</i>characterization

Wolfgang Braun, H.J. Möller, Y.–H. Zhang · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 36 citations

Natural Sciences, Materials Engineering, Materials Science +17