Concepedia

B. Garni

BG

Statistics

Publications

7

Citations

199

H-Index

7

Active since

1990

Affiliations

University of Wisconsin–Madison(Current)

B. Garni is an author at University of Wisconsin–Madison specializing in engineering, magnetoresistive random-access memory, and applied physics.

Top concepts

EngineeringApplied PhysicsMicroelectronicsMagnetoresistive Random-access MemoryMagnetismComputer EngineeringElectrical EngineeringSpintronicsMemory DevicesSurface Science

Publications per year

1990–2008

7

Publications

7

A 4-Mb 0.18-/spl mu/m 1T1MTJ toggle MRAM with balanced three input sensing scheme and locally mirrored unidirectional write drivers

T. André, Joseph Nahas, C.K. Subramanian et al. · IEEE Journal of Solid-State Circuits · 2005 · 80 citations

Non-volatile Memory, Chip Size, Unidirectional Write Drivers +11

Photoemission spectroscopy studies of the surface of GaN films grown by vapor phase epitaxy

Jian Ma, B. Garni, Nathan Perkins et al. · Applied Physics Letters · 1996 · 27 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Engineering +14

High speed toggle MRAM with mgO-based tunnel junctions

J. M. Slaughter, R. W. Dave, M. Durlam et al. · 2006 · 27 citations

Mgo-based Tunnel Junctions, Spintronics, Magnetism +14

STM studies of the initial stages of growth of Sb on Si(100) surfaces

B. Garni, Ivan I. Kravchenko, C. T. Salling · Surface Science · 1999 · 20 citations

Materials Science, Surface Characterization, Engineering +7

RHEED study of the kinetics of the (2 × 1)-to-(7 × 7) transformation in cleaved Si(111)

B. Garni, D. E. Savage, M. G. Lagally · Surface Science · 1990 · 18 citations

Rheed Study, Engineering, Natural Sciences +8

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