Observation of Native Ga Vacancies in GaN by Positron Annihilation

K. Saarinen, T. Laine, S. Kuisma, +12

Physical Review Letters

Wide-bandgap SemiconductorGan Bulk CrystalsPositron AnnihilationEngineeringYellow Luminescence +13

Sensitization of Er luminescence by Si nanoclusters

M. Wojdak, M.A.J. Klik, M. Forcales, +6

Physical Review B

Optical MaterialsEngineeringNanoclusterEr LuminescenceLuminescent Glass +16

Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions

O. Jambois, Yonder Berencén, K. Hijazi, +5

Journal of Applied Physics

Electroluminescence Power EfficiencyEngineeringCurrent TransportOptoelectronic DevicesSilicon On Insulator +20

High temperature annealing of rare earth implanted GaN films: Structural and optical properties

K. Lorenz, U. Wahl, E. Alves, +11

Optical Materials

Materials ScienceHigh Temperature AnnealingElectrical EngineeringWide-bandgap SemiconductorEngineering +7

Observation Of Native Ga Vacancies In Gan By Positron Annihilation

K. Saarinen, T. Laine, S. Kuisma, +12

MRS Proceedings

Wide-bandgap SemiconductorPositron AnnihilationPhysicsPositron Annihilation SpectroscopyNatural Sciences +4

Structural and optical characterisation of InN layers grown by MOCVD

Preetam Singh, P. Ruterana, Magali Morales, +5

Superlattices and Microstructures

Materials ScienceIi-vi SemiconductorOptical MaterialsInn LayersEngineering +7

Generalized rate-equation analysis of excitation exchange between silicon nanoclusters and erbium ions

Anthony J. Kenyon, M. Wojdak, Iftikhar Ahmad, +2

Physical Review B

EngineeringNanoclusterLuminescent GlassSilicon On InsulatorLuminescence Property +14

Growth of High Quality, MOCVD Grown Ga-Polar GaN Layers on GaN Substrates after Novel Reactive Ion Etching

J.L. Weyher, A. Zauner, Paul D. Brown, +4

physica status solidi (a)

Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesSemiconductorsEpitaxial Growth +18

Probing energy transfer in an ensemble of silicon nanocrystals

Hasitha Jayatilleka, D. Diamare, M. Wojdak, +6

Journal of Applied Physics

SemiconductorsNanoscale SystemEngineeringPhotoluminescencePhysics +12

Two-Electron Transition in Homoepitaxial GaN Layers

A. Fiorek, Jacek Baranowski, A. Wysmołek, +4

Acta Physica Polonica A