H.‐J. Ullrich - Concepedia

Author

H.‐J. Ullrich

Also Known As

H . Ullrich, H ULLRICH, H Ullrich, H. -J. Ullrich, H. J. Ullrich, H. Ullrich, H. ‐J. Ullrich, H.-J Ullrich, H.-J. Ullrich, H.J. Ullrich

Publications

668

Citations

H-Index

Concepts

All Affiliations

Technische Universität Dresden Leibniz Institute for Solid State and Materials Research Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute Technische Universität Berlin Leipzig University

About

H.‐J. Ullrich is an author at Technische Universität Dresden specializing in engineering, materials science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	16	445
2	Applied Physics	12	12	388
3	Health Sciences	4	4	82
4	Natural Sciences	3	3	61
5	Medicine	1	1	24

H.‐J. Ullrich

Publications

505

Citations

H-Index

Page 1

	Year	Citations
Characterisation of oxide and hydroxide layers on technical aluminum materials using XPS Julia Zähr, Steffen Oswald, Matthias Türpe, Vacuum Materials ScienceMaterials EngineeringAluminium NitrideHydroxide LayersEngineering	2011	118
Influence of chemical composition within the range of homogeneity on phase transition and transition temperature of V3Si single crystals. I. Preparation and characterization of single crystals M. Jurisch, K.‐H. Berthel, H.‐J. Ullrich physica status solidi (a) Materials ScienceCrystal StructureSingle CrystalsEngineeringCrystal Material	1977	36
Redistribution of Fe and Ti implanted into InP H.‐J. Ullrich, A. Knecht, D. Bimberg, Journal of Applied Physics Materials EngineeringMaterials ScienceIon ImplantationNuclear CeramicEngineering	1991	34
Defect-induced redistribution of Fe- or Ti-implanted and annealed GaAs, InAs, GaP, and InP H.‐J. Ullrich, A. Knecht, D. Bimberg, Journal of Applied Physics Materials ScienceSemiconductorsMaterials EngineeringIon ImplantationEngineering	1992	29
Influence of chemical composition within the range of homogeneity on phase transition and transition temperature of V3Si single crystals. II. On the defect structure of V3Si single crystals P. Paufler, E. Zedler, H.‐J. Ullrich, physica status solidi (a) Point DefectsEngineeringChemical CompositionChemistryDefect Tolerance	1977	27
Innovative Analysis of X-ray Microdiffraction Images on Selected Applications of the Kossel Technique Jürgen Bauch, J. Brechbühl, H.‐J. Ullrich, Crystal Research and Technology X-ray SpectroscopyEngineeringMicroscopyElectron DiffractionPolycapillary Optics	1999	27
Adsorption of germanium and of oxygen on cleaved InP(110) surfaces: Auger electron spectroscopy and measurements of work function and of surface photovoltage L. Koenders, F. Bartels, H.‐J. Ullrich, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena EngineeringWork FunctionChemistrySemiconductorsNonexistent Chemisorption Dipoles	1985	25
Excitation of Kossel patterns by synchrotron radiation H.‐J. Ullrich, Matthias Schlaubitz, F. Friedel, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment Synchrotron Radiation ResearchEngineeringPhysicsRadiation GenerationApplied Physics	1994	24
The X-ray fluorescence measurement place at beamline L of Hasylab : Special issue on micro- and ultratrace X-ray fluorescence analysis F. Lechtenberg, S. Garbe, Jürgen Bauch, Journal of Trace and Microprobe Techniques Beamline LHealth SciencesMicroscopySpectroscopyX-ray Diffraction	1996	24
Fe and Ti doping of InP grown by metalorganic chemical-vapor deposition for the fabrication of thermally stable high-resistivity layers Thomas Wolf, T. Zinke, A. Krost, Journal of Applied Physics Stable High-resistivity LayersEngineeringChemical DepositionSemiconductorsTi Doping	1994	22

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