S. M. Hegde

Infrared properties of AgGaTe2, a nonlinear optical chalcopyrite semiconductor

M. C. Ohmer, Jonathan T. Goldstein, David E. Zelmon et al. · Journal of Applied Physics · 1999 · 59 citations

Optical Materials, Infrared Properties, Engineering +20

ZnGeP2 grown by the liquid encapsulated Czochralski method

H. McD. Hobgood, T. Henningsen, R.N. Thomas et al. · Journal of Applied Physics · 1993 · 58 citations

Materials Science, Inorganic Chemistry, Optical Materials +12

Concentration quenching in fine-grained ceramic Nd:YAG

Larry D. Merkle, Mark Dubinskii, Kenneth L. Schepler et al. · Optics Express · 2006 · 53 citations · Full text

Engineering, Excitation Energy Transfer, Electronic Excited State +20

Low-temperature photoluminescence of Te-doped GaSb grown by liquid phase electroepitaxy

Shanthi Iyer, Leo J. Small, S. M. Hegde et al. · Journal of Applied Physics · 1995 · 28 citations

Semiconductors, Low-temperature Photoluminescence, Electronic Excited State +12

Photoluminescence study of liquid phase electroepitaxially grown GaInAsSb on (100)GaSb

Shanthi Iyer, S. M. Hegde, K. K. Bajaj et al. · Journal of Applied Physics · 1993 · 24 citations

Photoluminescence, Grown Gasb, Engineering +11