M. C. Ohmer - Concepedia

Author

M. C. Ohmer

Wright-Patterson Air Force Base

Also Known As

M Ohmer, M. C. Ohmer, M. Ohmer, M.C Ohmer, M.C. Ohmer, Mel Ohmer

Publications

816

Citations

H-Index

Concepts

All Affiliations

Wright-Patterson Air Force Base U.S. Air Force Institute of Technology United States Air Force Research Laboratory Wright Materials Research (United States)Lockheed Martin (United States)

About

M. C. Ohmer is an author at Wright-Patterson Air Force Base specializing in physics, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	16	709
2	Applied Physics	14	15	642
3	Natural Sciences	6	6	388
4	Chemistry	6	6	433
5	Electrical Engineering	1	1	24

M. C. Ohmer

Publications

742

Citations

H-Index

Page 1

	Year	Citations
Relationship of the second order nonlinear optical coefficient to energy gap in inorganic non-centrosymmetric crystals A. G. Jackson, M. C. Ohmer, Steven R. LeClair Infrared Physics & Technology EngineeringNonlinear OpticsPhysicsOptical PropertiesInorganic Non-centrosymmetric Crystals	1997	189
Characterization of defect-related optical absorption in ZnGeP2 Scott D. Setzler, Peter G. Schunemann, T. M. Pollak, Journal of Applied Physics Optical MaterialsEngineeringOptical AbsorptionAbsorption SpectroscopyChemistry	1999	63
Electron paramagnetic resonance study of a native acceptor in as-grown ZnGeP2 Margaret H. Rakowsky, W. Kühn, Walter J. Lauderdale, Applied Physics Letters EngineeringMagnetic ResonanceGermanium SiteChemistryMagnetism	1994	61
Infrared properties of AgGaTe2, a nonlinear optical chalcopyrite semiconductor M. C. Ohmer, Jonathan T. Goldstein, David E. Zelmon, Journal of Applied Physics Optical MaterialsInfrared PropertiesEngineeringConversion EfficiencyOptoelectronic Devices	1999	59
ZnGeP2 grown by the liquid encapsulated Czochralski method H. McD. Hobgood, T. Henningsen, R.N. Thomas, Journal of Applied Physics Materials ScienceInorganic ChemistryOptical MaterialsLarge BoulesEngineering	1993	58
Direct measurement of ZnGeP2 birefringence from 0.66 to 12.2 μm using polarized light interference D. W. Fischer, M. C. Ohmer, Peter G. Schunemann, Journal of Applied Physics Optical MaterialsEngineeringWave OpticOptical TestingOptical Metrology	1995	55
Atomistic calculations of defects in ZnGeP2 Peter Zapol, Ravindra Pandey, M. C. Ohmer, Journal of Applied Physics EngineeringChemistryDefect ToleranceElectronic StructureIi-vi Semiconductor	1996	48
Crystal growth and properties of AgGaTe2 Peter G. Schunemann, Scott D. Setzler, T. M. Pollak, Journal of Crystal Growth EngineeringCrystal MaterialNanotechnologyCrystal Growth TechnologyApplied Physics	2000	29
Rough sets applied to materials data A. G. Jackson, Steven R. LeClair, M. C. Ohmer, Acta Materialia Materials ScienceRough SetsEngineeringMechanical EngineeringMaterial Selection	1996	26
Influences of temperature and transport properties on the birefringence of CdGeAs2 D. W. Fischer, M. C. Ohmer, Jack E. McCrae Journal of Applied Physics PhotonicsElectrical EngineeringOptical MaterialsEngineeringPhysics	1997	24

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