Koji Nishizuka

Efficient radiative recombination from ⟨112¯2⟩ -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth technique

Koji Nishizuka, Mitsuru Funato, Yoichi Kawakami et al. · Applied Physics Letters · 2004 · 159 citations · Full text

Wide-bandgap Semiconductor, Engineering, X Ga 1 +16

Efficient rainbow color luminescence from InxGa1−xN single quantum wells fabricated on {112¯2} microfacets

Koji Nishizuka, Mitsuru Funato, Yoichi Kawakami et al. · Applied Physics Letters · 2005 · 74 citations

Optical Materials, Engineering, Optoelectronic Devices +17

Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20\bar21} GaN Substrates

Mitsuru Funato, Akio Kaneta, Yoichi Kawakami et al. · Applied Physics Express · 2010 · 50 citations

Wide-bandgap Semiconductor, Engineering, Weak Carrier/exciton Localization +16

Efficient green emission from (112¯2) InGaN∕GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy

Yoichi Kawakami, Koji Nishizuka, Daisuke Yamada et al. · Applied Physics Letters · 2007 · 29 citations

Optical Materials, Quantum Photonics, Engineering +22

Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well

Akio Sasaki, Koji Nishizuka, T. Wang et al. · Solid State Communications · 2003 · 24 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7