P. M. Koenraad

GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations

J. M. Ulloa, R. Gargallo‐Caballero, M. Bozkurt et al. · Physical Review B · 2010 · 94 citations · Full text

Optical Materials, Engineering, Excitonic Band Gap +19

Formation of InAs wetting layers studied by cross-sectional scanning tunneling microscopy

P. Offermans, P. M. Koenraad, R. Nötzel et al. · Applied Physics Letters · 2005 · 65 citations · Full text

Materials Science, Outward Displacement, Surface Characterization +13

Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy

J. H. Blokland, Mehmet Fatih Bozkurt, J. M. Ulloa et al. · Applied Physics Letters · 2009 · 58 citations · Full text

Materials Science, Quantum Science, Ii-vi Semiconductor +15

Structure of quantum dots as seen by excitonic spectroscopy versus structural characterization: Using theory to close the loop

Vladan Mlinar, M. Bozkurt, J. M. Ulloa et al. · Physical Review B · 2009 · 49 citations · Full text

Structural Characterization, Engineering, Microscopy +21

Scanning tunneling spectroscopy on organic semiconductors: Experiment and model

Martijn Kemerink, S. F. Alvarado, Péter Müller et al. · Physical Review B · 2004 · 38 citations · Full text

Engineering, Organic Electronics, Chemistry +16