J. H. Blokland

Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix

Giorgio Pettinari, A. Polimeni, M. Capizzi et al. · Applied Physics Letters · 2008 · 92 citations

Categoryquantum Electronics, Engineering, Electronic Properties +16

Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy

J. H. Blokland, Mehmet Fatih Bozkurt, J. M. Ulloa et al. · Applied Physics Letters · 2009 · 58 citations · Full text

Materials Science, Quantum Science, Ii-vi Semiconductor +15

Excitonic behavior in self-assembled InAs/GaAs quantum rings in high magnetic fields

N. A. J. M. Kleemans, J. H. Blokland, A. G. Taboada et al. · Physical Review B · 2009 · 37 citations · Full text

Quantum Science, Photoluminescence, Engineering +15

Tailoring the physical properties of thiol-capped PbS quantum dots by thermal annealing

Lyudmila Turyanska, U. Elfurawi, M Li et al. · Nanotechnology · 2009 · 36 citations

Materials Science, Nanocrystalline Material, Graphene Quantum Dot +14

Competition between zero-phonon and phonon-assisted luminescence in colloidal CdSe quantum dots

Frans J. P. Wijnen, J. H. Blokland, P. Chin et al. · Physical Review B · 2008 · 35 citations

Materials Science, Phonon-assisted Photoluminescence, Phonon-assisted Luminescence +15