M.S. Ramm - Concepedia

Author

M.S. Ramm

Friedrich-Alexander-Universität Erlangen-Nürnberg

Also Known As

M S Ramm, M. Ramm, M. S. Ramm, M.G Ramm, M.S Ramm, M.S. Ramm, Mark Ramm, Mark S. Ramm, Ramm, M., Ramm, M. S.

Publications

888

Citations

H-Index

Concepts

All Affiliations

Friedrich-Alexander-Universität Erlangen-Nürnberg Ioffe Institute Russian Academy of Sciences Impact Nitride Crystals (United States)

About

M.S. Ramm is an author at Friedrich-Alexander-Universität Erlangen-Nürnberg specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	25	698
2	Applied Physics	14	19	535
3	Materials Engineering	11	12	377
4	Electrical Engineering	3	3	61
5	Chemistry	2	2	34

M.S. Ramm

Publications

790

Citations

H-Index

Page 1

	Year	Citations
Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT M. Selder, L. Kadinski, Yu.N. Makarov, Journal of Crystal Growth EngineeringMaterial SimulationApplied PhysicsMaterial ModelingMass Transfer	2000	76
Simulation of Sublimation Growth of SiC Single Crystals S. Yu. Karpov, Yu.N. Makarov, M.S. Ramm physica status solidi (b) Materials ScienceMaterials EngineeringEngineeringMechanical EngineeringApplied Physics	1997	55
Analysis of sublimation growth of bulk SiC crystals in tantalum container S. Yu. Karpov, A.V. Kulik, I.A. Zhmakin, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringMicrostructureTantalum Container	2000	52
Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth A.O. Galyukov, S. Yu. Karpov, A.V. Kulik, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringNew ToolVirtual Reactor	2001	41
Optimization of sublimation growth of SiC bulk crystals using modeling M.S. Ramm, E. N. Mokhov, S.E. Demina, Materials Science and Engineering B Materials EngineeringMaterials ScienceEngineeringMicrostructureMaterial Simulation	1999	35
Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas A.S. Segal, A. N. Vorob'ev, S. Yu. Karpov, Journal of Crystal Growth Materials ScienceMaterials EngineeringInert GasEngineeringMechanical Engineering	2000	33
Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container Yu. E. Egorov, A.O. Galyukov, S. G. Gurevich, Materials science forum Materials ScienceMaterials EngineeringEngineeringSpecies Transport InsideTantalum Container	1998	32
Current crowding effect on light extraction efficiency of thin‐film LEDs K. A. Bulashevich, O. V. Khokhlev, I. Yu. Evstratov, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Optical MaterialsEngineeringOptoelectronic DevicesElectronic DevicesOptical Properties	2010	30
Heat transfer through source powder in sublimation growth of SiC crystal É. L. Kitanin, M.S. Ramm, Alexander Schmidt Materials Science and Engineering B Materials ScienceSic CrystalEngineeringPowder MetallurgyApplied Physics	1998	30
AlN substrates and epitaxy results H. Helava, Tat'jana Chemekova, O.V. Avdeev, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Materials ScienceMaterials EngineeringAluminium NitrideEngineeringOptoelectronic Materials	2010	30

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